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GT5G131

Features: • 3-V gate drive voltage: VGE = 3.0 V (min) (@IC = 130 A)• Supplied in compact and thin package requires only a small mounting area• 5th generation (trench gate structure) IGBT• Enhancement-mode• Peak collector current: IC = 130 A (max)Specifications ...

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SeekIC No. : 004357051 Detail

GT5G131: Features: • 3-V gate drive voltage: VGE = 3.0 V (min) (@IC = 130 A)• Supplied in compact and thin package requires only a small mounting area• 5th generation (trench gate structure...

GT5G131 Data Sheet

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Part Number:
GT5G131
Supply Ability:
5000

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Product Details

Description



Features:

• 3-V gate drive voltage: VGE = 3.0 V (min) (@IC = 130 A)
• Supplied in compact and thin package requires only a small mounting area
• 5th generation (trench gate structure) IGBT
• Enhancement-mode
• Peak collector current: IC = 130 A (max)


Specifications

SYMBOL PARAMETER RATING UNIT
VCES Collector-emitter voltage 400 V
VGES Gate-emitter voltage DC
Pulse		 ±6 V
VGES Collector current DC
Pulse		 ±8 V
IC Collector current DC 5 A
ICP Collector current 1 ms 130 A
PC Collector power dissipation (Note 1) 1.1 W
Tj Junction temperature 150
Tstg Storage temperaturerange -55 to +150

Note 1: Drive operation: Mount on glass epoxy board [1 inch2 * 1.5 t]
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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