GT5G103 Selling Leads, Price trend, GT5G103 DataSheet download, circuit diagram from SeekIC.com

Features: 􀁺· 3rd Generation􀁺· High Input Impedance􀁺· Low Saturation Voltage : VCE (sat) = 8 V (Max.) (IC = 130 A)􀁺· Enhancement−Mode􀁺· 4.5 V Gate DriveSpecifications CHARACTERISTIC SYMBOL RATING UNIT Collector−Emitter Voltage VCE...

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SeekIC No. : 004357050 Detail

GT5G103: Features: 􀁺· 3rd Generation􀁺· High Input Impedance􀁺· Low Saturation Voltage : VCE (sat) = 8 V (Max.) (IC = 130 A)􀁺· Enhancement−Mode􀁺· 4.5 V Gate D...

GT5G103 Data Sheet

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Part Number:: GT5G103
Supply Ability:: 5000

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Upload time: 2024/11/23

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IGBT Transistors IGBT, 400V, 130A

Product Details

Description

Features:

􀁺· 3rd Generation
􀁺· High Input Impedance
􀁺· Low Saturation Voltage : V_{CE (sat)} = 8 V (Max.) (I_C= 130 A)
􀁺· Enhancement−Mode
􀁺· 4.5 V Gate Drive

Specifications

CHARACTERISTIC		SYMBOL	RATING	UNIT
Collector−Emitter Voltage		V_CES	400	V
Gate−Emitter Voltage	DC	V_GES	±6	V
Gate−Emitter Voltage	Pulse	V_GES	±8	V
Collector Current	DC	I_C	5	A
Collector Current	1 ms	I_CP	130	A
Collector Power Dissipation	Ta = 25°C	P_C	1.3	W
Collector Power Dissipation	Tc = 25°C	P_C	20	W
Junction Temperature		T_j	150
Storage Temperature Range		T_stg	−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

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GT5G103

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