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GT25Q102

Features: • Third-generation IGBT• Enhancement mode type• High speed: tf = 0.32 s (max)• Low saturation voltage: VCE (sat) = 2.7 V (max)Specifications SYMBOL PARAMETER RATING UNIT VCES Collector to base voltage 1200 V VGES Gate-emitter voltage ±20 V ...

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GT25Q102: Features: • Third-generation IGBT• Enhancement mode type• High speed: tf = 0.32 s (max)• Low saturation voltage: VCE (sat) = 2.7 V (max)Specifications SYMBOL PARAMETE...

GT25Q102 Data Sheet

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Part Number:
GT25Q102
Supply Ability:
5000

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  • 1~5000
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Product Details

Description



Features:

• Third-generation IGBT
• Enhancement mode type
• High speed: tf = 0.32 s (max)
• Low saturation voltage: VCE (sat) = 2.7 V (max)


Specifications

SYMBOL PARAMETER RATING UNIT
VCES Collector to base voltage 1200 V
VGES Gate-emitter voltage ±20 V
IC Collector current DC 25 A
ICP Collector current 1 ms 50 A
PC Collector dissipationTC = 25 200
W
Tj Junction temperature 150
Tstg Storage temperaturerange -55 to +150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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