Application·High Input Impedance·Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A)·Enhancement−Mode·12V Gate DriveSpecifications CHARACTERISTIC SYMBOL RATING UNIT Collector−Emitter Voltage VCES 400 V Gate−Emitter Voltage VGES ±25 V ...
GT25G101: Application·High Input Impedance·Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A)·Enhancement−Mode·12V Gate DriveSpecifications CHARACTERISTIC SYMBOL RATING UNIT Col...
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CHARACTERISTIC |
SYMBOL |
RATING |
UNIT | |
Collector−Emitter Voltage |
VCES |
400 |
V | |
Gate−Emitter Voltage |
VGES |
±25 |
V | |
Collector Current | DC |
IC |
25 |
A |
1ms |
ICP |
170 | ||
Collector Power Dissipation | Ta = 25 |
PC |
1.3 |
W |
Tc = 25 |
PC |
75 | ||
Junction Temperature |
Tj |
150 |
||
Storage Temperature Range |
Tstg |
−55~150 |