GT25G101 Selling Leads, Price trend, GT25G101 DataSheet download, circuit diagram from SeekIC.com

Application·High Input Impedance·Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A)·Enhancement−Mode·12V Gate DriveSpecifications CHARACTERISTIC SYMBOL RATING UNIT Collector−Emitter Voltage VCES 400 V Gate−Emitter Voltage VGES ±25 V ...

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SeekIC No. : 004357012 Detail

GT25G101: Application·High Input Impedance·Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A)·Enhancement−Mode·12V Gate DriveSpecifications CHARACTERISTIC SYMBOL RATING UNIT Col...

GT25G101 Data Sheet

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Part Number:: GT25G101
Supply Ability:: 5000

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Upload time: 2024/8/14

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IGBT Transistors IGBT 400V 170A

Product Details

Description

Application

·High Input Impedance
·Low Saturation Voltage : V_{CE (sat)} = 8V (Max.) (I_C = 170A)
·Enhancement−Mode
·12V Gate Drive

Specifications

CHARACTERISTIC		SYMBOL	RATING	UNIT
Collector−Emitter Voltage		V_CES	400	V
Gate−Emitter Voltage		V_GES	±25	V
Collector Current	DC	I_C	25	A
Collector Current	1ms	I_CP	170	A
Collector Power Dissipation	Ta = 25	P_C	1.3	W
Collector Power Dissipation	Tc = 25	P_C	75	W
Junction Temperature		T_j	150
Storage Temperature Range		T_stg	−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

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GT25G101

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