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GT25G101

Application·High Input Impedance·Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A)·Enhancement−Mode·12V Gate DriveSpecifications CHARACTERISTIC SYMBOL RATING UNIT Collector−Emitter Voltage VCES 400 V Gate−Emitter Voltage VGES ±25 V ...

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SeekIC No. : 004357012 Detail

GT25G101: Application·High Input Impedance·Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A)·Enhancement−Mode·12V Gate DriveSpecifications CHARACTERISTIC SYMBOL RATING UNIT Col...

GT25G101 Data Sheet

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Part Number:
GT25G101
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Application

·High Input Impedance
·Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A)
·Enhancement−Mode
·12V Gate Drive


Specifications

CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector−Emitter Voltage
VCES
400
V
Gate−Emitter Voltage
VGES
±25
V
Collector Current DC
IC
25
A
1ms
ICP
170
Collector Power Dissipation Ta = 25
PC
1.3
W
Tc = 25
PC
75
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).


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