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GS88237BB-xxxV

Features: • Single/Dual Cycle Deselect selectable• IEEE 1149.1 JTAG-compatible Boundary Scan• ZQ mode pin for user-selectable high/low output drive• 1.8 V or 2.5 V core power supply• 1.8 V or 2.5 V I/O supply•LBO pin for Linear or Interleaved Burst mode• I...

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SeekIC No. : 004356269 Detail

GS88237BB-xxxV: Features: • Single/Dual Cycle Deselect selectable• IEEE 1149.1 JTAG-compatible Boundary Scan• ZQ mode pin for user-selectable high/low output drive• 1.8 V or 2.5 V core power...

GS88237BB-xxxV Data Sheet

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Part Number:
GS88237BB-xxxV
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Single/Dual Cycle Deselect selectable
• IEEE 1149.1 JTAG-compatible Boundary Scan
• ZQ mode pin for user-selectable high/low output drive
• 1.8 V or 2.5 V core power supply
• 1.8 V or 2.5 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 119-bump and 165-bump BGA packages
• RoHS-compliant 119-bump and 165-bump BGA packages available


Application

The GS88237BB/D-xxxV is a 9,437,184-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.




Specifications

Symbol Description
Value
Unit
VDD Voltage on VDD Pins
0.5 to 4.6
V
VDDQ Voltage in VDDQ Pins
0.5 to VDD
V
VI/O Voltage on I/O Pins
0.5 to VDDQ +0.5 ( 4.6 V max.)
V
VIN Voltage on Other Input Pins
0.5 to VDD +0.5 ( 4.6 V max.)
V
IIN Input Current on Any Pin
+/20
mA
IOUT Output Current on Any I/O Pin
+/20
mA
PD Package Power Dissipation
1.5
W
TSTG Storage Temperature
55 to 125
TBIAS Temperature Under Bias
55 to 125
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of this component.


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