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GS8321EV18/32/36E

Features: • FT pin for user-configurable flow through or pipeline operation• Dual Cycle Deselect (DCD) operation• IEEE 1149.1 JTAG-compatible Boundary Scan• 1.8 V +10%/10% core power supply• 1.8 V I/O supply•LBO pin for Linear or Interleaved Burst mode• In...

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SeekIC No. : 004355986 Detail

GS8321EV18/32/36E: Features: • FT pin for user-configurable flow through or pipeline operation• Dual Cycle Deselect (DCD) operation• IEEE 1149.1 JTAG-compatible Boundary Scan• 1.8 V +10%/10% co...

GS8321EV18/32/36E Data Sheet

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Part Number:
GS8321EV18/32/36E
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

• FT pin for user-configurable flow through or pipeline operation
• Dual Cycle Deselect (DCD) operation
• IEEE 1149.1 JTAG-compatible Boundary Scan
• 1.8 V +10%/10% core power supply
• 1.8 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 165-bump FP-BGA package
• Pb-Free 165-bump BGA package available


Application

The GS8321EV18/32/36E is a 37,748,736-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.




Specifications

Symbol Description Value Unit
VDD Voltage on VDD Pins 0.5 to 3.6 V
VDDQ Voltage in VDDQ Pins 0.5 to 3.6 V
VI/O Voltage on I/O Pins 0.5 to VDDQ +0.5 ( 3.6 V max.) V
VIN Voltage on Other Input Pins 0.5 to VDD +0.5 ( 3.6 V max.) V
IIN Input Current on Any Pin +/20 mA
IOUT Output Current on Any I/O Pin +/20 mA
PD Package Power Dissipation 1.5 W
TSTG Storage Temperature 55 to 125 °C
TBIAS Temperature Under Bias 55 to 125 °C

Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of this component.




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