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GS832018

Features: • FT pin for user-configurable flow through or pipeline operation• Single Cycle Deselect (SCD) operation• 2.5 V or 3.3 V +10%/10% core power supply• 2.5 V or 3.3 V I/O supply•LBO pin for Linear or Interleaved Burst mode• Internal input resistors on mod...

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SeekIC No. : 004355967 Detail

GS832018: Features: • FT pin for user-configurable flow through or pipeline operation• Single Cycle Deselect (SCD) operation• 2.5 V or 3.3 V +10%/10% core power supply• 2.5 V or 3.3 V ...

GS832018 Data Sheet

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Part Number:
GS832018
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/26

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Product Details

Description



Features:

• FT pin for user-configurable flow through or pipeline operation
• Single Cycle Deselect (SCD) operation
• 2.5 V or 3.3 V +10%/10% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 100-lead TQFP package
• Pb-Free 100-lead TQFP package available


Application

The GS832018/32/36T is a 37,748,736-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.




Pinout

Connection Diagram


Specifications

Symbol Description Value Unit
VDD Voltage on VDD Pins -0.5 to 4.6 V
VDDQ Voltage in VDDQ Pins -0.5 to VDD V
VI/O Voltage on I/O Pins -0.5 to VDDQ+0.5 ( 4.6 V max.) V
VIN Voltage on Other Input Pins -0.5 to VDD+0.5 ( 4.6 V max.) V
IIN Input Current on Any Pin +/- 20 mA
IOUT Output Current on Any I/O Pin +/- 20 mA
PD Package Power Dissipation 1.5 W
TSTG Storage Temperature -55 to 125
TBIAS Temperature Under Bias -55 to 125

Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of this component.


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