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GS8320E18/32/36T

Features: • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation• 2.5 V or 3.3 V +10%/10% core power supply• 2.5 V or 3.3 V I/O supply• LBO pin for Linear or Interleaved Burst mode• Internal input resistors on mod...

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SeekIC No. : 004355971 Detail

GS8320E18/32/36T: Features: • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation• 2.5 V or 3.3 V +10%/10% core power supply• 2.5 V or 3.3 V I...

GS8320E18/32/36T Data Sheet

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Part Number:
GS8320E18/32/36T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• FT pin for user-configurable flow through or pipeline operation
• Dual Cycle Deselect (DCD) operation
• 2.5 V or 3.3 V +10%/10% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 100-lead TQFP package
• Pb-Free 100-lead TQFP package available


Application

The GS8320E18/32/36T is a 37,748,736-bit high performance synchronous SRAM with a 2-bit burst address counter.

Although of a type originally developed for Level 2 Cache pplications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.




Pinout

Connection Diagram


Specifications

Symbol Description Value Unit
VDD Voltage on VDD Pins 0.5 to 4.6 V
VDDQ Voltage in VDDQ Pins 0.5 to 4.6 V
VI/O Voltage on I/O Pins 0.5 to VDDQ +0.5 ( 4.6 V max.) V
VIN Voltage on Other Input Pins 0.5 to VDD +0.5 ( 4.6 V max.) V
IIN Input Current on Any Pin +/20 mA
IOUT Output Current on Any I/O Pin +/20 mA
PD Package Power Dissipation 1.5 W
TSTG Storage Temperature 55 to 125 °C
TBIAS Temperature Under Bias 55 to 125 °C

Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of this component




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