Features: • Simultaneous Read and Write SigmaQuad™ Interface• JEDEC-standard pinout and package• Dual DoubleData Rate interface• Byte Write controls sampled at data-in time• Burst of 4 Read and Write• 2.5 V +100/100 mV core power supply• 1.5 V or 1.8...
GS8180DV18D-200: Features: • Simultaneous Read and Write SigmaQuad™ Interface• JEDEC-standard pinout and package• Dual DoubleData Rate interface• Byte Write controls sampled at data-in ...
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Symbol | Description | Value | Unit |
VDD | Voltage on VDD Pins | 0.5 to 3.6 | V |
VDDQ | Voltage in VDDQ Pins |
0.5 to 3.6 |
V |
VI/O | Voltage on I/O Pins | 0.5 to VDDQ +0.5 ( 3.6 V max.) | V |
VIN | Voltage on Other Input Pins | 0.5 to VDDQ +0.5 ( 3.6 V max.) | V |
IIN | Input Current on Any Pin | +/100 | mA dc |
IOUT | Output Current on Any I/O Pin | +/100 | mA dc |
TJ | Maximum Junction Temperature | 125 | °C |
TSTG | Storage Temperature | 55 to 125 | °C |
VREF | Voltage in VREF Pins | 0.5 to VDDQ | V |
GS8180DV18 is built in compliance with the SigmaQuad SRAM pinout standard for Separate I/O synchronous SRAMs. They are18,874,368-bit (18Mb) SRAMs. GS8180DV18 is the first in a family of wide, very low voltage HSTL I/O SRAMs designed to operate at the speeds needed to implement economical high performance networking systems.
SigmaQuad SRAMs GS8180DV18 are offered in a number of configurations.ome emulate and enhance other synchronous separate I/O SRAMs. A higher performance SDR (Single Data Rate) Burst of 2 version is also offered. The logical differences between the protocols employed by these RAMs hinge mainly on various combinations of address bursting, output data registering, and write cueing. Along with the Common I/O family of SigmaRAMs, the SigmaQuad family of SRAMs GS8180DV18 allows a user to implement the interface protocol best suited to the task at hand