Features: •FT pin for user-configurable flow through or pipelineoperation• Single Cycle Deselect (SCD) operation• 3.3 V +10%/5% core power supply• 2.5 V or 3.3 V I/O supply•LBO pin for Linear or Interleaved Burst mode• Internal input resistors on mode pins allow...
GS81032ATG: Features: •FT pin for user-configurable flow through or pipelineoperation• Single Cycle Deselect (SCD) operation• 3.3 V +10%/5% core power supply• 2.5 V or 3.3 V I/O supply...
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The GS81032A is a 1,048,576-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.
Symbol | Description | Value | Unit |
VDD | Voltage on VDD Pins | 0.5 to 4.6 | V |
VDDQ | Voltage in VDDQ Pins | 0.5 to VDD | V |
VCK | Voltage on Clock Input Pin | -0.5 to 6 | V |
VI/O | Voltage on I/O Pins | 0.5 to VDDQ+0.5 ( 4.6 V max.) | V |
VIN | Voltage on Other Input Pins | 0.5 to VDD+0.5 ( 4.6 V max.) | V |
IIN | Input Current on Any Pin | +/20 | mA |
IOUT | Output Current on Any I/O Pin | +/20 | mA |
PD | Package Power Dissipation | 1.5 | W |
TSTG | Storage Temperature | 55 to 125 | |
TBIAS | Temperature Under Bias | 55 to 125 |
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of this component.
The GS81032A is a 1,048,576-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the GS81032A now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.