Features: • Late Write mode, Pipelined Read mode• JEDEC-standard SigmaRAM™ pinout and package• 1.8 V +150/100 mV core power supply• 1.8 V CMOS Interface• ZQ controlled user-selectable output drive strength• Dual Cycle Deselect• Burst Read and Write o...
GS8170LW72AC-350: Features: • Late Write mode, Pipelined Read mode• JEDEC-standard SigmaRAM™ pinout and package• 1.8 V +150/100 mV core power supply• 1.8 V CMOS Interface• ZQ contr...
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Symbol |
Description |
Value |
Unit |
VDD |
Voltage on VDD Pins |
0.5 to 2.5 |
V |
VDDQ |
Voltage on VDDQ Pins |
0.5 to VDD |
V |
VI/O |
Voltage on I/O Pins |
0.5 to VDDQ + 0.5 ( 2.5 V max.) |
V |
VIN |
Voltage on Other Input Pins |
0.5 to VDDQ + 0.5 ( 2.5 V max.) |
V |
IIN |
Input Current on Any Pin |
+/100 |
mA dc |
IOUT |
Output Current on Any I/O Pin |
+/100 |
mA dc |
TJ |
Maximum Junction Temperature |
125 |
|
TSTG |
Storage Temperature |
55 to 125 |
GS8170LW36/72A SigmaRAMs are built in compliance with the SigmaRAM pinout standard for synchronous SRAMs. GS8170LW36/72A are 18,874,368-bit (18Mb) SRAMs. This family of wide, very low voltage CMOS I/O SRAMs is designed to operate at the speeds needed to implement economical high performance networking systems.
RAMs of GS8170LW36/72A are offered in a number of configurations including Late Write, Double Late Write, and Double Data Rate (DDR). The logical differences between the protocols employed by these RAMs mainly involve various approaches to write cueing and data transfer rates. The RAM™ GS8170LW36/72A family standard allows a user to implement the interface protocol best suited to the task at hand.