Features: • Late Write mode, Pipelined Read mode• JEDEC-standard SigmaRAM™ pinout and package• 1.8 V +150/100 mV core power supply• 1.8 V CMOS Interface• ZQ controlled user-selectable output drive strength• Dual Cycle Deselect• Burst Read and Write o...
GS8170LW36: Features: • Late Write mode, Pipelined Read mode• JEDEC-standard SigmaRAM™ pinout and package• 1.8 V +150/100 mV core power supply• 1.8 V CMOS Interface• ZQ contr...
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• Late Write mode, Pipelined Read mode
• JEDEC-standard SigmaRAM™ pinout and package
• 1.8 V +150/100 mV core power supply
• 1.8 V CMOS Interface
• ZQ controlled user-selectable output drive strength
• Dual Cycle Deselect
• Burst Read and Write option
• Fully coherent read and write pipelines
• Echo Clock outputs track data output drivers
• Byte write operation (9-bit bytes)
• 2 user-programmable chip enable inputs
• IEEE 1149.1 JTAG-compliant Serial Boundary Scan
• 209-bump, 14 mm x 22 mm, 1 mm bump pitch BGA package
• Pin-compatible with future 36Mb, 72Mb, and 144Mb evices
Symbol |
Description |
Value |
Unit |
VDD |
Voltage on VDD Pins |
0.5 to 4.6 |
V |
VDDQ |
Voltage in VDDQ Pins |
0.5 to 4.6 |
V |
VI/O |
Voltage on I/O Pins |
0.5 to VDDQ +0.5 ( 4.6 V max.) |
V |
VIN |
Voltage on Other Input Pins |
0.5 to VDD +0.5 ( 4.6 V max.) |
V |
IIN |
Input Current on Any Pin |
+/20 |
mA |
IOUT |
Output Current on Any I/O Pin |
+/20 |
mA |
PD |
Package Power Dissipation |
1.5 |
W |
TSTG |
Storage Temperature |
55 to 125 |
|
TBIAS |
Temperature Under Bias |
55 to 125 |
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to RecommendedOperating Conditions. Exposure to conditions exceeding the Recommended Operating Conditions, for an extended period of time, may affectreliability of this component.