Features: • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with both pipelined and flow through NtRAM™, NoBL™ and ZBT™ SRAMs
• 1.8 V or 2.5 V core power supply
• 1.8 V or 2.5 V I/O supply
• User-configurable Pipeline and Flow Through mode
• ZQ mode pin for user-selectable high/low output drive
• IEEE 1149.1 JTAG-compatible Boundary Scan
• On-chip write parity checking; even or odd selectable
• On-chip parity encoding and error detection
• LBO pin for Linear or Interleave Burst mode
• Pin-compatible with 2M, 4M, and 8M devices
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• ZZ Pin for automatic power-down
• JEDEC-standard 119- and 165-bump BGA packages
• RoHS-compliant 119- and 165-bump BGA packages availableSpecifications
Symbol |
Description |
Value |
Unit |
VDD |
Voltage on VDD Pins |
0.5 to 4.6 |
V |
VDDQ |
Voltage in VDDQPins |
0.5 to 4.6 |
V |
VI/O |
Voltage on I/O Pins |
0.5 to VDDQ+0.5 ( 4.6 V max.) |
V |
VIN |
Voltage on Other Input Pins |
0.5 to VDD +0.5 ( 4.6 V max.) |
V |
IIN |
Input Current on Any Pin |
+/20 |
mA |
IOUT |
Output Current on Any I/O Pin |
+/20 |
mA |
PD |
Package Power Dissipation |
1.5 |
W |
TSTG |
Storage Temperature |
55 to 125 |
|
TBIAS |
Temperature Under Bias |
55 to 125 |
|
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of this component.DescriptionThe GS8162ZxxB(B/D)-xxxV is an 18Mbit Synchronous Static SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other pipelined read/double late write or flow through read/single late write SRAMs, allow utilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the GS8162ZxxB(B/D)-xxxV is switched from read to write cycles.
Because GS8162ZxxB(B/D)-xxxV is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the input clock. Burst order control (
LBO) must be tied to a power rail for proper operation. Asynchronous inputs of GS8162ZxxB(B/D)-xxxV include the Sleep mode enable (ZZ) and Output Enable. Output Enable can be used to override the synchronous control of the output drivers and turn the RAM's output drivers off at any time. Write cycles are internally self-timed and initiated by the rising edge of the clock input. GS8162ZxxB(B/D)-xxxV feature eliminates complex off-chip write pulse generation required by asynchronous SRAMs and simplifies input signal timing.
The GS8162ZxxB(B/D)-xxxV may be configured by the user to operate in Pipeline or Flow Through mode. Operating as a pipelined synchronous device, in addition to the rising-edge-triggered registers that capture input signals, the GS8162ZxxB(B/D)-xxxV incorporates a rising edge triggered output register. For read cycles, pipelined SRAM output data is temporarily stored by the edge-triggered output register during the access cycle and then released to the output drivers at the next rising edge of clock.
The GS8162ZxxB(B/D)-xxxV is implemented with GSI's high performance CMOS technology and is available in a JEDEC-standard 119-bump or 165-bump BGA package.