GS8161E18D-200 Selling Leads, Price trend, GS8161E18D-200 DataSheet download, circuit diagram from SeekIC.com

Features: • FT pin for user-configurable flow through or pipeline operation• Dual Cycle Deselect (DCD) operation• IEEE 1149.1 JTAG-compatible Boundary Scan• 2.5 V or 3.3 V +10%/10% core power supply• 2.5 V or 3.3 V I/O supply• LBO pin for Linear or Interleaved B...

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SeekIC No. : 004355824 Detail

GS8161E18D-200: Features: • FT pin for user-configurable flow through or pipeline operation• Dual Cycle Deselect (DCD) operation• IEEE 1149.1 JTAG-compatible Boundary Scan• 2.5 V or 3.3 V +1...

GS8161E18D-200 Data Sheet

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Part Number:: GS8161E18D-200
Supply Ability:: 5000

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1~5000

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Negotiable

Processing time
15 Days

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Upload time: 2024/12/21

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Product Details

Description

Features:

• FT pin for user-configurable flow through or pipeline operation
• Dual Cycle Deselect (DCD) operation
• IEEE 1149.1 JTAG-compatible Boundary Scan
• 2.5 V or 3.3 V +10%/10% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 100-lead TQFP and 165-bump BGA packages

Application

The GS8161E18(T/D)/GS8161E32(D)/GS8161E36(T/D) is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.

Pinout

Connection Diagram

Specifications

Symbol	Description	Value	Unit
V_DD	Voltage on V_DD Pins	0.5 to 4.6	V
V_DDQ	Voltage in V_DDQ Pins	0.5 to 4.6	V
VI_/O	Voltage on I/O Pins	0.5 to V_DDQ +0.5 ( 4.6 V max.)	V
V_IN	Voltage on Other Input Pins	0.5 to V_DD +0.5 ( 4.6 V max.)	V
I_IN	Input Current on Any Pin	+/20	mA
I_OUT	Output Current on Any I/O Pin	+/20	mA
P_D	Package Power Dissipation	1.5	W
T_STG	Storage Temperature	55 to 125	oC
T_BIAS	Temperature Under Bias	55 to 125	oC

GS8161E18D-200

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