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GS816136CD

Features: • IEEE 1149.1 JTAG-compatible Boundary Scan• 2.5 V or 3.3 V +10%/10% core power supply• 2.5 V or 3.3 V I/O supply•LBO pin for Linear or Interleaved Burst mode• Internal input resistors on mode pins allow floating mode pins• Byte Write (BW) and/or Globa...

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SeekIC No. : 004355819 Detail

GS816136CD: Features: • IEEE 1149.1 JTAG-compatible Boundary Scan• 2.5 V or 3.3 V +10%/10% core power supply• 2.5 V or 3.3 V I/O supply•LBO pin for Linear or Interleaved Burst mode•...

GS816136CD Data Sheet

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Part Number:
GS816136CD
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• IEEE 1149.1 JTAG-compatible Boundary Scan
• 2.5 V or 3.3 V +10%/10% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 165-bump BGA package


Application

The GS816118/36CD is an 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.


Specifications

Symbol Description Value Unit
VDD Voltage on VDD Pins 0.5 to 4.6 V
VDDQ Voltage in VDDQPins 0.5 to 4.6 V
VI/O Voltage on I/O Pins 0.5 to VDDQ+0.5 ( 4.6 V max.) V
VIN Voltage on Other Input Pins 0.5 to VDD +0.5 ( 4.6 V max.) V
IIN Input Current on Any Pin +/20 mA
IOUT Output Current on Any I/O Pin +/20 mA
PD Package Power Dissipation 1.5 W
TSTG Storage Temperature 55 to 125
TBIAS Temperature Under Bias 55 to 125
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of this component.


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