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GS816118

Features: • IEEE 1149.1 JTAG-compatible Boundary Scan• 2.5 V or 3.3 V +10%/10% core power supply• 2.5 V or 3.3 V I/O supply• LBO pin for Linear or Interleaved Burst mode• Internal input resistors on mode pins allow floating mode pins• Byte Write ( BW ) and/or Gl...

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SeekIC No. : 004355811 Detail

GS816118: Features: • IEEE 1149.1 JTAG-compatible Boundary Scan• 2.5 V or 3.3 V +10%/10% core power supply• 2.5 V or 3.3 V I/O supply• LBO pin for Linear or Interleaved Burst mode̶...

GS816118 Data Sheet

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Part Number:
GS816118
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• IEEE 1149.1 JTAG-compatible Boundary Scan
• 2.5 V or 3.3 V +10%/10% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Byte Write ( BW ) and/or Global Write ( GW ) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard  package


Application

The GS816118/36T is an 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter.  Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device  now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.


Pinout

Connection Diagram


Specifications

Symbol Description Value Unit
VDD Voltage on VDD Pins 0.5 to 4.6 V
VDDQ Voltage in VDDQ Pins 0.5 to 4.6 V
VCK Voltage on Clock Input Pin 0.5 to 6 V
VI/O Voltage on I/O Pins 0.5 to VDDQ +0.5 ( 4.6 V max.) V
VIN Voltage on Other Input Pins 0.5 to VDD +0.5 ( 4.6 V max.) V
IIN Input Current on Any Pin +/20 mA
IOUT Output Current on Any I/O Pin +/20 mA
PD Package Power Dissipation 1.5 W
TSTG Storage Temperature 55 to 125
TBIAS Temperature Under Bias 55 to 125



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