Features: • NBT (No Bus Turn Around) functionality allows zero wait read-write-read bus utilization; Fully pin-compatible with both pipelined and flow through NtRAM™, NoBL™ and ZBT™ SRAMs• 1.8 V +10%/10% core power supply• 1.8 V I/O supply• User-configurab...
GS8160ZV36CT: Features: • NBT (No Bus Turn Around) functionality allows zero wait read-write-read bus utilization; Fully pin-compatible with both pipelined and flow through NtRAM™, NoBL™ and ZBT...
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• NBT (No Bus Turn Around) functionality allows zero wait read-write-read bus utilization; Fully pin-compatible with both pipelined and flow through NtRAM™, NoBL™ and ZBT™ SRAMs
• 1.8 V +10%/10% core power supply
• 1.8 V I/O supply
• User-configurable Pipeline and Flow Through mode
• LBO pin for Linear or Interleave Burst mode
• Pin compatible with 2M, 4M, and 8M devices
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• ZZ Pin for automatic power-down
• JEDEC-standard 100-lead TQFP package
• Pb-Free 100-lead TQFP package available
Symbol | Description | Value | Unit |
VDD | Voltage on VDD Pins | 0.5 to 3.6 | V |
VDDQ | Voltage in VDDQ Pins | 0.5 to 3.6 | V |
VI/O | Voltage on I/O Pins | 0.5 to VDD +0.5 ( 3.6 V max.) | V |
VIN | Voltage on Other Input Pins | 0.5 to VDD +0.5 ( 3.6 V max.) | V |
IIN | Input Current on Any Pin | +/20 | mA |
IOUT | Output Current on Any I/O Pin | +/20 | mA |
PD | Package Power Dissipation | 1.5 | W |
TSTG | Storage Temperature | 55 to 125 | °C |
TBIAS | Temperature Under Bias | 55 to 125 | °C |
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of this component.