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GS816032T

Features: • FTpin for user-configurable flow through or pipeline operation• Single Cycle Deselect (SCD) operation• 2.5 V or 3.3 V +10%/10% core power supply• 2.5 V or 3.3 V I/O supply• LBOpin for Linear or Interleaved Burst mode• Internal input resistors on mode...

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SeekIC No. : 004355790 Detail

GS816032T: Features: • FTpin for user-configurable flow through or pipeline operation• Single Cycle Deselect (SCD) operation• 2.5 V or 3.3 V +10%/10% core power supply• 2.5 V or 3.3 V I...

GS816032T Data Sheet

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Part Number:
GS816032T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• FTpin for user-configurable flow through or pipeline operation
• Single Cycle Deselect (SCD) operation
• 2.5 V or 3.3 V +10%/10% core power supply
• 2.5 V or 3.3 V I/O supply
• LBOpin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 100-lead TQFP package


Application

The GS816018/32/36T is an 18,874,368-bit (16,777,216-bit for x32 version) high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high  performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main  store to networking chip set support.


Pinout

Connection Diagram


Specifications

Symbol Description Value Unit
VDD Voltage on VDD Pins 0.5 to 4.6 V
VDDQ Voltage in VDDQ Pins 0.5 to 4.6 V
VCK Voltage on Clock Input Pin 0.5 to 6 V
VI/O Voltage on I/O Pins 0.5 to VDDQ +0.5 ( 4.6 V max.) V
VIN Voltage on Other Input Pins 0.5 to VDD +0.5 ( 4.6 V max.) V
IIN Input Current on Any Pin +/20 mA
IOUT Output Current on Any I/O Pin +/20 mA
PD Package Power Dissipation 1.5 W
TSTG Storage Temperature 55 to 125
TBIAS Temperature Under Bias 55 to 125



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