Features: • Register-Register Late Write mode, Pipelined Read mode• 2.5 V +200/200 mV core power supply• 1.5 V or 1.8 V HSTL Interface• ZQ controlled programmable output drivers• Dual Cycle Deselect• Fully coherent read and write pipelines• Byte write oper...
GS815018: Features: • Register-Register Late Write mode, Pipelined Read mode• 2.5 V +200/200 mV core power supply• 1.5 V or 1.8 V HSTL Interface• ZQ controlled programmable output driv...
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Symbol |
Description |
Value |
Unit |
VDD |
Voltage on VDD Pins |
0.5 to 3.6 |
V |
VDDQ |
Voltage in VDDQ Pins |
0.5 to VDD |
V |
VI/O |
Voltage on I/O Pins |
0.5 to VDDQ + 0.5 ( 3.6 V max.) |
V |
VIN |
Voltage on Other Input Pins |
0.5 to VDDQ + 0.5 ( 3.6 V max.) |
V |
IIN |
Input Current on Any Pin |
+/20 |
mA dc |
IOUT |
Output Current on Any I/O Pin |
+/20 |
mA dc |
TJ |
Maximum Junction Temperature |
125 |
|
TSTG |
Storage Temperature |
55 to 125 |
Because GS815018/36A are synchronous devices, address data inputs and read/write control inputs are captured on the rising edge of the input clock. Write cycles are internally self-timed and initiated by the rising edge of the clock input. GS815018/36A feature eliminates complex off-chip write pulse generation required by asynchronous SRAMs and simplifies input signal timing.
GS815018/36A support pipelined reads utilizing a rising-edge-triggered output register. They also utilize a Dual Cycle Deselect (DCD) output deselect protocol.
GS815018/36A are implemented with high performance technology and are packaged in a 119-bump BGA.