GP801FSM18

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T_case = 25°C unless stated otherwise

The Powerline range of high power modules GP801FSM18 includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A.

The GP801FSM18 is a single switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. Designed with low VCE(SAT) to minimise conduction losses, the module is of particular relevance in low to medium frequency applications. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. GP801FSM18 is optimised for traction drives and other applications requiring high thermal cycling capability.

The GP801FSM18 incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.