GP801DDM18

Features:

· Low V_CE(SAT)
· 800A Per Switch
· High Thermal Cycling Capability
· Non Punch Through Silicon
· Isolated MMC Base with AlN Substrates

Application

·High Reliability
·Motor Controllers
·Traction Drives
·Low Loss System Retrofit


Specifications

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T_case = 25°C unless stated otherwise

Symbol	Parameter	Conditions	Ratings	Unit
VCES	Collector-emitter voltage	VGE = 0V	1800	V
VGES	Gate-emitter voltage		±20	V
IC	Collector collector current	Tcase =80°C	800	A
IC(PK)	Peak collector current	1ms, Tcase = 110 °C	1600	A
Pmax	Max. transistor power dissipation	Tcase = 25°C, Tj = 150°C	6940	W
Visol	Isolation voltage	Commoned terminals to base plate. AC RMS, 1 min, 50Hz	4000	V

Description

The Powerline range of high power modules GP801DDM18 includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A.

The GP801DDM18 is a dual switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. Designed with low VCE(SAT) to minimise conduction losses, the module is of particular relevance in low to medium frequency applications. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. GP801DDM18 is optimised for traction drives and other applications requiring high thermal cycling capability.

The GP801DDM18 incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.