GP800NSS33

Features:

·Non Punch Through Silicon
·Isolated Copper Baseplate with AL₂O₃ Substrate
·Low Inductance Internal Construction


Application

·High Power Inverters
·Motor Controllers
·Induction Heating
·Resonant Converters


Specifications

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

T_case = 25°C unless stated otherwise

Symbol	Parameter	Conditions	Ratings	Unit
VCES	Collector-emitter voltage	VGE = 0V	3300	V
VGES	Gate-emitter voltage		±20	V
IC	Collector collector current	Tcase =7 0°C	800	A
IC(PK)	Peak collector current	1ms, Tcase = 110 °C	1600	A
Pmax	Max. transistor power dissipation	Tcase = 25°C, Tj = 150°C	8.3	KW
Visol	Isolation voltage	Commoned terminals to base plate. AC RMS, 1 min, 50Hz	6	KV

Description

The Powerline range of high power modules GP800NSS33 includes dual, half bridge and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. T

he GP800NSS33 is a single switch 3300V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications.

The GP800NSS33 incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.