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GP800NSM33

Features: ·High Thermal Cycling Capability·Non Punch Through Silicon·Isolated MMC Base with AlN Substrates·3300V Rating·800A Per ModuleApplication· High Reliability Inverters· Motor Controllers· Traction Drives· Resonant ConvertersSpecificationsStresses above those listed under 'Absolute Maximum R...

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GP800NSM33: Features: ·High Thermal Cycling Capability·Non Punch Through Silicon·Isolated MMC Base with AlN Substrates·3300V Rating·800A Per ModuleApplication· High Reliability Inverters· Motor Controllers· Tra...

GP800NSM33 Data Sheet

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Part Number:
GP800NSM33
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

·High Thermal Cycling Capability
·Non Punch Through Silicon
·Isolated MMC Base with AlN Substrates
·3300V Rating
·800A Per Module


Application

· High Reliability Inverters
· Motor Controllers
· Traction Drives
· Resonant Converters




Specifications

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25°C unless stated otherwise

Symbol
Parameter
Conditions
Ratings
Unit
VCES Collector-emitter voltage
VGE = 0V
3300
V
VGES Gate-emitter voltage

 
±20
V
IC Collector collector current
Tcase =80°C
800
A
IC(PK) Peak collector current
1ms, Tcase = 120 °C
1600
A
Pmax Max. transistor power dissipation
Tcase = 25°C, Tj = 150°C
9.6
W
Visol Isolation voltage
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
6000
V




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