GP800FSS12

Features: ·n - Channel·Enhancement Mode·High Input Impedance·Optimised For High Power High Frequency Operation·Isolated Base·Full 1200V Capability·800A Per ModuleApplication·High Power Switching·Motor Control·Inverters·Traction SystemsSpecificationsStresses above those listed under 'Absolute Maxim...

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SeekIC No. : 004355044 Detail

GP800FSS12: Features: ·n - Channel·Enhancement Mode·High Input Impedance·Optimised For High Power High Frequency Operation·Isolated Base·Full 1200V Capability·800A Per ModuleApplication·High Power Switching·Mot...

floor Price/Ceiling Price

Part Number:
GP800FSS12
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/12/25

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Product Details

Description



Features:

·n - Channel
·Enhancement Mode
·High Input Impedance
·Optimised For High Power High Frequency Operation
·Isolated Base
·Full 1200V Capability
·800A Per Module



Application

·High Power Switching
·Motor Control
·Inverters
·Traction Systems



Specifications

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may inlcude potentially hazardous rupture of the package. Appropriate safety precautions should always be followed.

Tcase = 25°C unless stated otherwise.

Symbol
Parameter
Test Conditions
Max.
Unit
VCES Collector-emitter voltage
VGE = 0V
1200
V
VGES Gate-emitter voltage

 

±20
V
IC Collector current
DC,Tcase = 25 °C
1050
A
DC,Tcase = 75 °C
800
A
IC(PK)  
1ms, Tcase = 75°C
1600
A
Pmax Maximum power dissipation
(Transistor)
6000
W
Visol Isolation voltage
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
2500
V




Description

The GP800FSS12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power loss, the GP800FSS12 is suitable for a variety of high voltage applications in motor drives and power conversion. The high impedance gate simplifies gate drive considerations enabling operation directly from low power control circuitry.

Fast switching times allow high frequency operation making the device suitable for the latest drive designs employing pwm and high frequency switching. The GP800FSS12 has a wide reverse bias safe operating area (RBSOA) for ultimate reliability in demanding applications.

GP800FSS12 incorporate electrically isolated base plates and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.

The powerline range of high power modules GP800FSS12 includes dual and single switch configurations with a range of current and voltage capabilities to match customer system demands.

GP800FSS12 applications include dc motor drives, ac pwm drives, main traction drives and auxiliaries, large ups systems and resonant inverters.


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