Features: ·n - Channel·Enhancement Mode·High Input Impedance·Optimised For High Power High Frequency Operation·Isolated Base·Full 1200V Capability·800A Per ModuleApplication·High Power Switching·Motor Control·Inverters·Traction SystemsSpecificationsStresses above those listed under 'Absolute Maxim...
GP800FSS12: Features: ·n - Channel·Enhancement Mode·High Input Impedance·Optimised For High Power High Frequency Operation·Isolated Base·Full 1200V Capability·800A Per ModuleApplication·High Power Switching·Mot...
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Features: ·High Thermal Cycling Capability·800A Per Module·Non Punch Through Silicon·Isolated MMC ...
Features: · Non Punch Through Silicon· Isolated Copper Baseplate With Al2O3 Substrate· Low Inducta...
Features: ·High Thermal Cycling Capability·800A Per Switch·Non Punch Through Silicon·Isolated MMC ...
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may inlcude potentially hazardous rupture of the package. Appropriate safety precautions should always be followed.
Tcase = 25°C unless stated otherwise.
Symbol |
Parameter |
Test Conditions |
Max. |
Unit |
VCES | Collector-emitter voltage |
VGE = 0V |
1200 |
V |
VGES | Gate-emitter voltage |
|
±20 |
V |
IC | Collector current |
DC,Tcase = 25 °C |
1050 |
A |
DC,Tcase = 75 °C |
800 |
A | ||
IC(PK) |
1ms, Tcase = 75°C |
1600 |
A | |
Pmax | Maximum power dissipation |
(Transistor) |
6000 |
W |
Visol | Isolation voltage |
Commoned terminals to base plate. AC RMS, 1 min, 50Hz |
2500 |
V |