GP800DDS12

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may inlcude potentially hazardous rupture of the package. Appropriate safety precautions should always be followed.

Tcase = 25°C unless stated otherwise.

The GP800DDS12 is a dual switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. GP800DDS12 is designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. The high impedance gate simplifies gate drive considerations enabling operation directly from low power control circuitry.

Fast switching times allow high frequency operation making the GP800DDS12 suitable for the latest drive designs employing pwm and high frequency switching. The IGBT has a wide reverse bias safe operating area (RBSOA) for ultimate reliability in demanding applications.

GP800DDS12 incorporate electrically isolated base plates and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.

The powerline range of high power modules includes dual and single switch configurations with a range of current and voltage capabilities to match customer system demands.

GP800DDS12 applications include dc motor drives, ac pwm drives, main traction drives and auxiliaries, large ups systems and resonant inverters.