Features: ·4,194,304 Words x 4 Bit Organization·Extended Data Out Mode Capability·Single Power Supply (5V+/-10%)·Fast Access Time & Cycle Time·Low Power Active : 660/605/550mW (MAX) Standby : 11mW (CMOS level : MAX) : 0.83mW (L-version : MAX)·RAS Only Refresh, CAS before RAS Refresh, Hidden Re...
GM71V17403C: Features: ·4,194,304 Words x 4 Bit Organization·Extended Data Out Mode Capability·Single Power Supply (5V+/-10%)·Fast Access Time & Cycle Time·Low Power Active : 660/605/550mW (MAX) Standby : 11...
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Symbol | Parameter | Rating | Unit |
TA | Ambient Temperature under Bias | 0 ~ 70 | C |
TSTG | Storage Temperature (Plastic) | -55 ~ 125 | C |
VIN/VOUT | Voltage on any Pin Relative to VSS | -0.5 ~ Vcc+0.5 (<=4.6V(MAX)) |
V |
VCC | Voltage on VCC Relative to VSS | -0.5 ~ 4.6 | V |
IOUT | Short Circuit Output Current | 50 | mA |
PD | Power Dissipation | 10 | A |
The GM71V(S)17403C/CL is the new generation dynamic RAM organized 4,194,304 words x 4 bit. GM71V(S)17403C/CL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The GM71V(S)17403C/CL offers Extended Data Out (EDO) Page Mode as a high speed access mode. Multiplexed address inputs permit the GM71V(S)17403C/CL to be packaged in a standard 300 mil 24(26) pin SOJ, and a standard 300 mil 24(26) pin plastic TSOP II. The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment. System oriented features include single power supply 3.3V +/- 0.3V tolerance, direct interfacing capability with high performance logic families such as Schottky TTL.