GB70NA60UF

The GB70NA60UF is designed as one kind of "high side chopper" IGBT SOT-227 (warp 2 speed IGBT) with current would be 70A. GB70NA60UF is designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating and it would be easy to assemble and parallel.

GB70NA60UF has nine features. (1)NPT warp 2 speed IGBT technology with positive temperature coefficient. (2)Square RBSOA. (3)Low Vce(on). (4)FRED Pt hyperfast rectifier. (5)Fully isolated package. (6)Very low internal inductance (<=5nH typical). (7)Industry standard outline. (8)UL approved file E78996. (9)Compliant to RoHS directive 2002/95/EC. Those are all the main features.

Some absolute maximum ratings of GB70NA60UF have been concluded into several points as follow. (1)Its collector to emitter voltage would be 600V. (2)Its continuous collector current would be 111A at Tc=25°C and would be 76A at Tc=80°C. (3)Its pulsed collector current would be 120A. (4)Its clamped inductive load current would be 120A. (5)Its diode continuous forward current would be 113A at Tc=25°C and would be 75A at Tc=80°C. (6)Its peak diode forward current would be 200A. (7)Its gate to emitter voltage would be +/-20V. (8)Its IGBT power dissipation would be 447W at Tc=25°C and would be 250W at Tc=80°C. (9)Its diode power dissipation would be 236W at Tc=25°C and would be 132W at Tc=80°C. (10)Its RMS isolation voltage would be 2500V. It should be noted that stresses above those values listed in the absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of GB70NA60UF are concluded into several points as follow. (1)Its collector to emitter breakdown voltage would be min 600V. (2)Its gate threshold voltage would be min 3V and typ 3.9V and max 5V. (3)Its temperature coefficient of threshold voltage would be typ -9mV/°C. And so on. If you have any question or suggestion or want to know more about GB70NA60UF please visit our website and contact us for details. Thank you!