GB70LA60UF

The GB70LA60UF is designed as one kind of "low side choppers" IGBT SOT-227 (warp 2 speed IGBT) with current of 70A. GB70LA60UF is designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating and would be easy to assemble and parallel.

GB70LA60UF has nine features. (1)NPT warp 2 speed IGBT technology with positive temperature coefficient. (2)Square RBSOA. (3)Low Vce(on). (4)FRED Pt hyperfast rectifier. (5)Fully isolated package. (6)Very low internal inductance (5nH typical). (7)Industry standard outline. (8)UL approved file E78996. (9)Compliant to RoHS directive 2002/95/EC. Those are all the main features.

Some absolute maximum ratings of GB70LA60UF have been concluded into several points as follow. (1)Its collector to emitter voltage would be 600V. (2)Its continuous collector current would be 111A at Tc=25°C and would be 76A at Tc=80°C. (3)Its pulsed collector current would be 120A. (4)Its clamped inductive load current would be 120A. (5)Its diode continuous forward current would be 113A at Tc=25°C and would be 75A at Tc=80°C. (6)Its peak diode forward current would be 200A. (7)Its gate to emitter voltage would be +/-20V. (8)Its power dissipation, IGBT would be 447W at Tc=25°C and would be 250W at Tc=80°C. (9)Its power dissipation, diode would be 236W at Tc=25°C and would be 132W at Tc=80°C. (10)Its RMS isolation voltage would be 2500V. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of GB70LA60UF are concluded as follow. (1)Its collector to emitter breakdown  voltage would be min 600V. (2)Its gate threshold voltage would be min 3V, typ 3.9V and max 5V. At present we have not got so much information about this IC and we would try hard to get more information about GB70LA60UF. If you have any question or suggestion or want to know more information please contact us for details. Thank you!