GB50YF120N

The GB50YF120N is designed as one kind of IGBT fourpack modules with current of 50A. GB50YF120N's benefits include benchmark efficiency for SMPS appreciation in particular HF welding, rugged transient performance, low EMI, requires less snubbing, direct mounting to heatsink space saving, PCB solderable terminals and low junction to case thermal resistance.

GB50YF120N has seven features. (1)Square RBSOA. (2)HEXFRED low Qrr, low switching energy. (3)Positive Vce(on) temperature coefficient. (4)Copper baseplate. (5)Low stray inductance design. (6)Speed 8 to 60kHz. (7)Designed and qualified for industrial market. Those are all the main features.

Some absolute maximum ratings of GB50YF120N have been concluded into several points as follow. (1)Its collector to emitter voltage would be 1200V. (2)Its continuous collector current would be 66A at Tc=25°C and would be 44A at Tc=80°C. (3)Its pulsed collector current would be 150A. (4)Its clamped inductive load current would be 150A. (5)Its diode continuous forward current would be 40A at Tc=25°C and would be 25A at Tc=80°C. (6)Its diode maximum forward current would be 150A. (7)Its gate to emitter voltage would be +/-20V. (8)Its maximum power dissipation IGBT would be 330W at Tc=25°C and would be 180W at Tc=80°C. (9)Its maximum operating junction temperature would be 150°C. (10)Its storage temperature range would be from -40°C to 125°C. (11)Its isolation voltage would be AC 2500V min. It should be noted that stresses above those values listed in the absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of GB50YF120N are concluded into several points as follow. (1)Its collector to emitter breakdown voltage would be min 1200V. (2)Its gate threshold voltage would be min 4.0V and typ 4.9V and max 6.0V. (3)Its threshold voltage temperature coefficient would be typ -10mV/°C. And so on. If you have any question or suggestion or want to know more about GB50YF120N please contact us for details. Thank you!