GB50LA120UX

The GB50LA120UX is designed as one kind of "low side choppers" IGBT SOT-227 (ultrafast IGBT) with current of 50A. GB50LA120UX is designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating and would be easy to assemble and parallel.

GB50LA120UX has ten features. (1)NPT generation V IGBT technology. (2)Square RBSOA. (3)HEXFRED clamping diode. (4)Positive Vce(on) temperature coefficient. (5)Fully isolated package. (6)Speed 8kHz to 60kHz. (7)Very low internal inductance (5nH typical). (8)Industry standard outline. (9)UL approved file E78996. (10)Compliant to RoHS directive 2002/95/EC. Those are all the main features.

Some absolute maximum ratings of GB50LA120UX have been concluded into several points as follow. (1)Its collector to emitter voltage would be 1200V. (2)Its continuous collector current would be 84A at Tc=25°C and would be 57A at Tc=80°C. (3)Its pulsed collector current would be 150A. (4)Its clamped inductive load current would be 150A. (5)Its diode continuous forward current would be 76A at Tc=25°C and would be 52A at Tc=80°C. (6)Its gate to emitter voltage would be +/-20V. (7)Its power dissipation, IGBT would be 431W at Tc=25°C and would be 242W at Tc=80°C. (8)Its power dissipation, diode would be 278W at Tc=25°C and would be 156W at Tc=80°C. (9)Its RMS isolation voltage would be 2500V. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of GB50LA120UX are concluded as follow. (1)Its collector to emitter breakdown voltage would be min 1200V. (2)Its gate threshold voltage would be min 4V, typ 5V and max 4V. (3)Its temperature coefficient of threshold voltage would be typ -10mV/°C. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information about GB50LA120UX please contact us for details. Thank you!