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GAL16V8Z

Features: • ZERO POWER E2CMOS TECHNOLOGY - 100µA Standby Current - Input Transition Detection on GAL16V8Z - Dedicated Power-down Pin on GAL16V8ZD - Input and Output Latching During Power Down• HIGH PERFORMANCE E2 CMOS TECHNOLOGY - 12 ns Maximum Propagation Delay - Fmax = 83.3 MHz...

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SeekIC No. : 004347099 Detail

GAL16V8Z: Features: • ZERO POWER E2CMOS TECHNOLOGY - 100µA Standby Current - Input Transition Detection on GAL16V8Z - Dedicated Power-down Pin on GAL16V8ZD - Input and Output Latching During Power...

GAL16V8Z Data Sheet

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Part Number:
GAL16V8Z
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

• ZERO POWER E2CMOS  TECHNOLOGY
   - 100µA Standby Current
   - Input Transition Detection on GAL16V8Z
   - Dedicated Power-down Pin on GAL16V8ZD
   - Input and Output Latching During Power Down
• HIGH PERFORMANCE E2 CMOS TECHNOLOGY
   - 12 ns Maximum Propagation Delay
   - Fmax  = 83.3 MHz
   - 8 ns Maximum from Clock Input to Data Output
   - TTL Compatible 16 mA Output Drive
   - UltraMOS®  Advanced CMOS Technology
• E2CELL TECHNOLOGY
   - Reconfigurable Logic
   - Reprogrammable Cells
   - 100% Tested/100% Yields
   - High Speed Electrical Erasure (<100ms)
   - 20 Year Data Retention
• EIGHT OUTPUT LOGIC MACROCELLS
   - Maximum Flexibility for Complex Logic Designs
   - Programmable Output Polarity
   - Architecturally Similar to Standard GAL16V8
• PRELOAD AND POWER-ON RESET OF ALL REGISTERS
   - 100% Functional Testability
• APPLICATIONS INCLUDE:
   - Battery Powered Systems
   - DMA Control
   - State Machine Control
   - High Speed Graphics Processing
• ELECTRONIC SIGNATURE FOR IDENTIFICATION


Pinout

Connection Diagram


Specifications

Supply voltage VCC ......................................... .5 to +7V
Input voltage applied .......................... 2.5 to VCC +1.0V
Off-state output voltage applied ......... 2.5 to VCC +1.0V
Storage Temperature ................................... 65 to 150
Ambient Temperature with
Power Applied .............................................. 55 to 125

1. Stresses above those listed under the "Absolute Maximum Ratings"
    may cause permanent damage to the device.  These are stress only
    ratings and functional operation of the device at these or at any
    other conditions above those indicated in the operational sections of
    this specification is not implied (while programming, follow the
    programming specifications).


Description

The GAL16V8Z and GAL16V8ZD, at 100 µA standby current and 12ns propagation delay provides the highest speed and lowest power combination PLD available in the market.  The GAL16V8Z/ ZD is manufactured using Lattice Semiconductor's advanced zero power E2 CMOS process, which combines CMOS with Electrically Erasable (E2 ) floating gate technology.

The GAL16V8Z uses Input Transition Detection (ITD)  to put the device in standby mode and is capable of emulating the full func- tionality of the standard GAL16V8.  The GAL16V8ZD utilizes a dedicated power-down pin (DPP) to put the device in standby mode. It has 15 inputs available to the AND array.

Unique test circuitry and reprogrammable cells allow complete AC, DC, and functional testing during manufacture.  As a result, Lattice Semiconductor delivers 100% field programmability and functionality of all GAL products.  In addition, 100 erase/write cycles and data retention in excess of 20 years are specified.




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