GAL16V8QS

DescriptionThe EECMOS GAL16V8QS devices are fabricated using National's CS80BEV O.8 Electrically Erasable CMOS process.This advanced process makes National's GAL16V8QS extremely fast, allowing controlled output edge rates which dramatically reduce noise. Low noise is actually specified and guarant...

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SeekIC No. : 004347097 Detail

GAL16V8QS: DescriptionThe EECMOS GAL16V8QS devices are fabricated using National's CS80BEV O.8 Electrically Erasable CMOS process.This advanced process makes National's GAL16V8QS extremely fast, allowing contr...

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Part Number:
GAL16V8QS
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/7/15

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Product Details

Description



Description

The EECMOS GAL16V8QS devices are fabricated using National's CS80BEV O.8 Electrically Erasable CMOS process.This advanced process makes National's GAL16V8QS  extremely  fast,  allowing  controlled  output edge rates which dramatically reduce noise. Low noise is actually   specified   and   guaranteed   with   National's GAL16V8QS Quiet SeriesTM devices.

The GAL16V8QS has the following features include:(1)emulates popular PAL  devices; (2)fully supported by national's OPAL7M and OPAL jr software as well as 3rd-party PLD development software; (3)commercial and industrial grades; (4)fast programming algorithm---reduces programming cost, increases throughput; (5)electrically erasable cell technology-100% tested at manufacture.National's   fast   programming   algorithm   allows   the GAL16V8QS to be programmed significantly faster than similar devices using industry standard programmers. Fast programming reduces the cost of programming by greatly increasing programming throughput. National guarantees a minimum of 100 erase/write cycles.

The absolute maximum ratings of the GAL16V8QS are:(1)storage temperature:-65 to +150°C;(2)junction temperature:-65 to +150°C;(3)supply voltage:-0.5 to +7.0V;(4)input voltage:-2.5 to Vcc+1.0V;(5)off-state output voltage:-2.5 to Vcc+1.0V;(6)latchup current:200mA.As system frequencies increase, so do concerns over both device generated and system generated noise. Proper printed circuit board layout and construction techniques should be followed by the designer to minimize system generated noise, additionally however, IC manufacturers should bear the responsibility to minimize device generated noise. One of the biggest sources of device generated noise is ground bounce. Ground bounce not only manifests itself on the ground pin, but more importantly on quiet outputs, input thresholds, and other internal circuitry. Noise on quiet outputs can cause the false triggering of external devices, while a shift in the device's internal ground can cause false triggering and even instability in the device itself. Often these problems are attributed to a damaged or faulty PLD when, in fact, the PLD has marginally lower noise immunity than other seemingly identical devices.

At present there is not too much information about this model.If you are willing to find more  about GAL16V8QS, please pay attention to our web! We will promptly update the relevant information.




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