GAL16V8QS-10L

The EECMOS GAL16V8QS-10L is fabricated using national's CS80BEV 0.8u  electrically erasable CMOS progress.This advanced process of GAL16V8QS-10L makes national's GAL16V8QS extremly fast,allowing controlled output edge rates which dramatically reduce noise.Low noise is actually specified and guaranteed with national's GAL16V8QS quiet series devices.

Features of the GAL16V8QS-10L are:(1)high performance 0.8 us EECMOS technology; (2)reduced power; (3)electrically erasable cell technology; (4)fast programming algorithm; (5)emulates popular PAL devices; (6)commercial and industrial grades.

The absolute maximum ratings of the GAL16V8QS-10L can be summarized as:(1): supply voltage(VCC) is -0.5 V to 7 V; (2): input voltage is -2.5 V to Vcc+1.0 V; (3): off-state output voltage is -2.5 V to Vcc+1.0 V; (4): output current is ±100 mA; (5): storage temperature is -65 to +150; (6): latchup current is 200 mA; (7): ambient temperature with power applied to -65 to +125; (8): junction temperature is -65 to +150; (9): lead temperature(soldering, 10 seconds) is 300.