GAL16V8

Supply voltage V_CC ...................................... 0.5 to +7V
Input voltage applied ......................... 2.5 to V_CC +1.0V
Off-state output voltage applied ........ 2.5 to V_CC +1.0V
Storage Temperature ............................... 65 to 150°C
Ambient Temperature with
Power Applied .......................................... 55 to 125°C
1.Stresses above those listed under the "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress only ratings and functional operation of the device at these or at any other conditions above those indicated in the operational sections of this specification is not implied (while programming, follow the programming specifications).

The GAL16V8, at 3.5 ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E²) floating gate technology to provide the highest speed performance of GAL16V8 available in the PLD market. High speed erase times (<100ms) allow the devices to be reprogrammed quickly and efficiently.

The generic architecture provides maximum design flexibility by allowing the Output Logic Macrocell (OLMC) to be configured by the user. An important subset of the many architecture configurations possible with the GAL16V8 are the PAL architectures listed in the table of the macrocell description section. GAL16V8 devices are capable of emulating any of these PAL architectures with full fun ction/fuse map/parametric compatibility.

Unique test circuitry and reprogrammable cells of GAL16V8 allow complete AC, DC, and functional testing during manufacture. As a result, Lattice Semiconductor delivers 100% field programmability and functionality of all GAL products. In addition, 100 erase/write cycles and data retention in excess of 20 years are specified.