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GA50TS120U

Features: • Generation 4 IGBT technology• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode• Very low conduction and switching losses• HEXFRED™antiparallel diodes with ultra- softrecovery• Industry standa...

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GA50TS120U: Features: • Generation 4 IGBT technology• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode• Very low conduction and switc...

GA50TS120U Data Sheet

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Part Number:
GA50TS120U
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Generation 4 IGBT technology
• UltraFast:  Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft recovery
• Industry standard package
• UL approved


Application

• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS, SMPS, Welding
• Lower EMI, requires less snubbing


Specifications

Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 1200 V
IC @ TC=25°C Continuous Collector Current 50 A
ICM Pulsed Collector Current 100
ILM Peak Switching Current 100
IFM Peak Diode Forward Current 100
VGE Gate-to-Emitter Voltage ± 20 V
VISOL RMS Isolation Voltage, Any Terminal to Case, t=1 min 2500
PD @ TC=25°C Maximum Power Dissipation 280 W
PD @ TC=85°C Maximum Power Dissipation

145

TJ Operating Junction -40 to + 150 °C
TSTG Storage Temperature Range -40 to + 125



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