Features: • Generation 4 IGBT technology• UltraFast: Optimized for high operatingfrequencies 8-40 kHz in hard switching, >200kHz in resonant mode• Very low conduction and switching losses• HEXFRED™antiparallel diodes with ultra- soft recovery• Industry standa...
GA500TD60U: Features: • Generation 4 IGBT technology• UltraFast: Optimized for high operatingfrequencies 8-40 kHz in hard switching, >200kHz in resonant mode• Very low conduction and switch...
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Parameter | Max. | Units | |
VCES | Collector-to-Emitter Breakdown Voltage | 600 | V |
IC @ TC=25°C | Continuous Collector Current | 500 | A |
ICM | Pulsed Collector Current | 1000 | |
ILM | Peak Switching Current | 1000 | |
IFM | Peak Diode Forward Current | 500 | |
VGE | Gate-to-Emitter Voltage | ± 20 | V |
VISOL | RMS Isolation Voltage, Any Terminal to Case, t=1 min | 2500 | |
PD @ TC=25°C | Maximum Power Dissipation | 1550 | W |
PD @ TC=85°C | Maximum Power Dissipation |
800 | |
TJ | Operating Junction | -40 to + 150 | °C |
TSTG | Storage Temperature Range | -40 to + 125 |