Features: *Complementary to NPN Type G2N5551*High Collector-Emitter Breakdown Voltage (VCEO=150V@IC=1mA))Specifications Parameter Symbol Ratings Unit Junction Temperature TJ +150 Storage Temperature Tstg -55 ~ +150 Collector to Base Voltage VCBO -160 V Collector to E...
G2N5401: Features: *Complementary to NPN Type G2N5551*High Collector-Emitter Breakdown Voltage (VCEO=150V@IC=1mA))Specifications Parameter Symbol Ratings Unit Junction Temperature TJ +150 S...
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Parameter | Symbol | Ratings | Unit |
Junction Temperature | TJ | +150 | |
Storage Temperature | Tstg | -55 ~ +150 | |
Collector to Base Voltage | VCBO | -160 | V |
Collector to Emitter Voltage | VCEO | -150 | V |
Emitter to Base Voltage | VEBO | -5 | V |
Emitter to Base Voltage | IC | -600 | mA |
Emitter to Base Voltage | PD | 625 | mW |
The G2N5401 is designed for general purpose applications requiring high breakdown voltages.