Features: *Complementary to PNP Type G2N5401*High Collector Emitter Breakdown Voltage (VCEO > 160V (@IC=1mA)Specifications Parameter Symbol Ratings Unit Junction Temperature Tj +150 Storage Temperature Tstg -55 ~ +150 Collector to Base Voltage VCBO...
G2N5551: Features: *Complementary to PNP Type G2N5401*High Collector Emitter Breakdown Voltage (VCEO > 160V (@IC=1mA)Specifications Parameter Symbol Ratings Unit Junction Temperature ...
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Parameter |
Symbol |
Ratings |
Unit |
Junction Temperature |
Tj |
+150 |
|
Storage Temperature |
Tstg |
-55 ~ +150 |
|
Collector to Base Voltage |
VCBO |
180 |
V |
Collector to Emitter Voltage |
VCEO |
160 |
V |
Emitter to Base Voltage |
VEBO |
6 |
V |
Collector Current |
IC |
600 |
mA |
Total Power Dissipation |
PD |
625 |
mW |