FZ400R12KS4

Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Power Dissipation :
Packaging :
Product : IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max : 1200 V
Maximum Operating Temperature : + 125 C
Package / Case : 62MM
Configuration : Single Dual Emitter
Continuous Collector Current at 25 C : 510 A


Features:






Specifications






Description

FZ400R12KS4 is a kind of IGBT-Module.

What comes next is about the maximum ratings of FZ400R12KS4. The VCES (collector-emitter voltage) is 1200 V. The IC nom (DC collector current) is 400 A at TC=70, Tvj=150; The IC (DC collector current) is 510 A at TC=25, Tvj=150. The ICM (repetitive peak collector current) is 800 A at tp=1 ms. The Ptot (total power dissipation) is 2500 W at TC=25, Tvj=150. The VGES (gate-emitter peak voltage) is ± 20 V.

The following is about the characteristics of FZ400R12KS4. The typical VCE sat (collector-emitter saturation voltage) is 3.20 V and the maximum is 3.70 V at IC=400 A, VGE=15 V, Tvj=25; The typical VCE sat (collector-emitter saturation voltage) is 3.85 V. The minimum VGEth (gate threshold voltage) is 4.5 V, the typical is 5.5 V and the maximum is 6.5 V at IC=16.0 mA, VCE=VGE, Tvj=25. The typical QG (gate charge) is 4.20C at VGE=-15 to +15 V. The typical RGint (internal gate resistor) is 1.3 at Tvj=25. The typical input capacitance is 26.0 pF at f=1 MHz, Tvj=25, VCE=25 V, VGE=0 V. The typical reverse capacitance is 1.70 pF at f=1 MHz, Tvj=25, VCE=25 V, VGE=0 V. The maximum ICES (collector-emitter cutoff current) is 5.0 mA.