IGBT Modules 1200V 400A SINGLE
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Product : | IGBT Silicon Modules | Configuration : | Single |
Collector- Emitter Voltage VCEO Max : | 1200 V | Collector-Emitter Saturation Voltage : | 1.7 V |
Continuous Collector Current at 25 C : | 650 A | Gate-Emitter Leakage Current : | 400 nA |
Power Dissipation : | 2250 W | Maximum Operating Temperature : | + 125 C |
Package / Case : | 62MM |