IGBT Transistors 3300V 1200A SINGLE
FZ1200R33KF2C: IGBT Transistors 3300V 1200A SINGLE
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Configuration : | Triple Common Emitter Common Gate | Collector- Emitter Voltage VCEO Max : | 3300 V |
Collector-Emitter Saturation Voltage : | 3.4 V | Maximum Gate Emitter Voltage : | +/- 20 V |
Continuous Collector Current at 25 C : | 2000 A | Gate-Emitter Leakage Current : | 400 nA |
Power Dissipation : | 14.5 KW | Maximum Operating Temperature : | + 125 C |
Package / Case : | IS5a ( 62 mm )-9 |