FZ1200R12KE3

IGBT Transistors 1200V 1200A SINGLE

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SeekIC No. : 00143536 Detail

FZ1200R12KE3: IGBT Transistors 1200V 1200A SINGLE

floor Price/Ceiling Price

US $ 292.7~384.02 / Piece | Get Latest Price
Part Number:
FZ1200R12KE3
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~2
  • 2~3
  • 3~5
  • 5~10
  • Unit Price
  • $384.02
  • $345.62
  • $307.22
  • $292.7
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/7

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Product Details

Quick Details

Configuration : Dual Common Emitter Common Gate Collector- Emitter Voltage VCEO Max : 1200 V
Collector-Emitter Saturation Voltage : 1.7 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 1200 A Gate-Emitter Leakage Current : 400 nA
Power Dissipation : 5.6 KW Maximum Operating Temperature : + 125 C
Package / Case : IHM 130X140-7    

Description

Packaging :
Gate-Emitter Leakage Current : 400 nA
Maximum Gate Emitter Voltage : +/- 20 V
Maximum Operating Temperature : + 125 C
Collector- Emitter Voltage VCEO Max : 1200 V
Collector-Emitter Saturation Voltage : 1.7 V
Configuration : Dual Common Emitter Common Gate
Package / Case : IHM 130X140-7
Continuous Collector Current at 25 C : 1200 A
Power Dissipation : 5.6 KW


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