FZ1200R12KE3, US $ 292.7-384.02 , Infineon Technologies, FZ1200R12KE3 DataSheet download, circuit diagram from SeekIC.com

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FZ1200R12KE3: IGBT Transistors 1200V 1200A SINGLE

FZ1200R12KE3 Data Sheet

US $ 292.7~384.02 / Piece | Get Latest Price

Part Number:: FZ1200R12KE3
Mfg:: Infineon Technologies
Supply Ability:: 5000

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$384.02
$345.62
$307.22
$292.7

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Upload time: 2024/12/22

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Recent History
What is this?

FZ1200R12HE4 evaluate
US $393.6 - 436.8 / Piece

IGBT Modules
FZ1200R12HP4 evaluate
US $393.6 - 436.8 / Piece

IGBT Modules IGBT 1200V 1200A
FZ1200R12KF4 evaluate
US $446.65 - 595.52 / Piece

IGBT Modules 1200V 1200A SINGLE

Product Details

Quick Details

Configuration :	Dual Common Emitter Common Gate	Collector- Emitter Voltage VCEO Max :	1200 V
Collector-Emitter Saturation Voltage :	1.7 V	Maximum Gate Emitter Voltage :	+/- 20 V
Continuous Collector Current at 25 C :	1200 A	Gate-Emitter Leakage Current :	400 nA
Power Dissipation :	5.6 KW	Maximum Operating Temperature :	+ 125 C
Package / Case :	IHM 130X140-7

Description

Packaging :
Gate-Emitter Leakage Current : 400 nA
Maximum Gate Emitter Voltage : +/- 20 V
Maximum Operating Temperature : + 125 C
Collector- Emitter Voltage VCEO Max : 1200 V
Collector-Emitter Saturation Voltage : 1.7 V
Configuration : Dual Common Emitter Common Gate
Package / Case : IHM 130X140-7
Continuous Collector Current at 25 C : 1200 A
Power Dissipation : 5.6 KW

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FZ1200R12KE3

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