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FSTJ9055R

Features: • 62A, -60V, rDS(ON) = 0.023• Total Dose- Meets Pre-RAD Specifications to 100K RAD (Si)• Single Event- Safe Operating Area Curve for Single Event Effects- SEE Immunity for LET of 36MeV/mg/cm2 withVDS up to 80% of Rated Breakdown andVGS of 10V Off-Bias• Dose Rate- ...

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SeekIC No. : 004344872 Detail

FSTJ9055R: Features: • 62A, -60V, rDS(ON) = 0.023• Total Dose- Meets Pre-RAD Specifications to 100K RAD (Si)• Single Event- Safe Operating Area Curve for Single Event Effects- SEE Immunity fo...

FSTJ9055R Data Sheet

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Part Number:
FSTJ9055R
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 62A, -60V, rDS(ON) = 0.023
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with
VDS up to 80% of Rated Breakdown and
VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 6nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2
- Usable to 3E14 Neutrons/cm2


Specifications

    FSTJ9055D, FSTJ9055R UNITS
Drain to Source Voltage VDS -60 V
Drain to Gate Voltage (RGS = 20k) VDGR -60 V
Continuous Drain Current
TC = 25°C		 ID 62 A
TC = 100°C ID 39 A
Pulsed Drain Current IDM 186 A
Gate to Source Voltage VGS ±20 V
Maximum Power Dissipation
TC = 25°C		 PT 125 W
TC = 100°C PT 50 W
Linear Derating Factor IAS 1.20 W/°C
Single Pulsed Avalanche Current, L = 100H, (See Test Figure)   186 A
Continuous Source Current (Body Diode) IS 62 A
Pulsed Source Current (Body Diode). ISM 186 A
Operating and Storage Temperature TJ, TSTG -55 to 150 °C
Lead Temperature (During Soldering)
(Distance >0.063in (1.6mm) from Case, 10s Max)		 TL 300 °C


CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.




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