Features: • 62A, -60V, rDS(ON) = 0.023• Total Dose- Meets Pre-RAD Specifications to 100K RAD (Si)• Single Event- Safe Operating Area Curve for Single Event Effects- SEE Immunity for LET of 36MeV/mg/cm2 withVDS up to 80% of Rated Breakdown andVGS of 10V Off-Bias• Dose Rate- ...
FSTJ9055D: Features: • 62A, -60V, rDS(ON) = 0.023• Total Dose- Meets Pre-RAD Specifications to 100K RAD (Si)• Single Event- Safe Operating Area Curve for Single Event Effects- SEE Immunity fo...
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FSTJ9055D, FSTJ9055R | UNITS | ||
Drain to Source Voltage | VDS | -60 | V |
Drain to Gate Voltage (RGS = 20k) | VDGR | -60 | V |
Continuous Drain Current TC = 25°C |
ID | 62 | A |
TC = 100°C | ID | 39 | A |
Pulsed Drain Current | IDM | 186 | A |
Gate to Source Voltage | VGS | ±20 | V |
Maximum Power Dissipation TC = 25°C |
PT | 125 | W |
TC = 100°C | PT | 50 | W |
Linear Derating Factor | IAS | 1.20 | W/°C |
Single Pulsed Avalanche Current, L = 100H, (See Test Figure) | 186 | A | |
Continuous Source Current (Body Diode) | IS | 62 | A |
Pulsed Source Current (Body Diode). | ISM | 186 | A |
Operating and Storage Temperature | TJ, TSTG | -55 to 150 | °C |
Lead Temperature (During Soldering) (Distance >0.063in (1.6mm) from Case, 10s Max) |
TL | 300 | °C |
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.