FSPYE234R

Features:

9A, 250V, r_DS(ON)= 0.215
UIS Rated
Total Dose
   -Meets Pre-RAD Specifcations to 100K RAD (Si)
   -Rated to 300K RAD (Si)
Single Event
   -Safe Operating Area Curve for Single Event Effe
   -SEE Immunity for LET of 36MeV/mg/cm² with
   V_DS up to 100% of Rated Breakdown and
   V_GSof 10V Off-Bias
Dose Rate
   -Typically Survives 3E9 RAD (Si)/s at 80% BV_DSs
  -Typically Survives 2E12 if Current Limited to I_AS
Photo Current
  -3.0nA Per-RAD (Si)/s Typically
Neutron
  -Maintain Pre-RAD Specifcations
   for 1E13 Neutrons/cm²
  -Usable to 1E14 Neutrons/cm²
 


Specifications

Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DS
Drain to Gate Voltage (R_GS  = 20k . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..V_DGR
Continuous Drain Current
T_C  = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . ..I _D
T_C  = 100 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . .I_D
Pulsed Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .   . .I_DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . .  .V_GS
Maximum Power Dissipation
T_C  = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .... .P_T
T_C  = 100 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. .P_T
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100H (See Test Figure). . . . . . . . . . . . . . . .I_AS
Continuous Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..... .I_S
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . . .I_SM
Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . .T_J , T_STG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . .  .T_L
(Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical) 


Description

Intersil Star*Power™ Rad Hard MOSFETs FSPYE234R have been specifcally developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs FSPYE234R offer the system designer both extremely low r_DS(ON) and Gate Charge allowing the development of low loss Power Subsystems.

Star*Power FETs FSPYE234R combine this electrical capability with total dose radiation hardness up to 300K RADs while maintaining the guaranteed performance for SEE (Single Event Effects) which the Intersil FS families have always featured