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FSPYC164F

Features: • 70A (Current Limited by Package), 150V, r DS(ON) = 0.021• UIS Rated• Total Dose - Meets Pre-Rad Specifications to 100 krad (Si) - Rated to 300 krad (Si)• Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 wit...

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SeekIC No. : 004344703 Detail

FSPYC164F: Features: • 70A (Current Limited by Package), 150V, r DS(ON) = 0.021• UIS Rated• Total Dose - Meets Pre-Rad Specifications to 100 krad (Si) - Rated to 300 krad (Si)• Single E...

FSPYC164F Data Sheet

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Part Number:
FSPYC164F
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 70A (Current Limited by Package), 150V, r DS(ON) = 0.021
• UIS Rated
• Total Dose
    - Meets Pre-Rad Specifications to 100 krad (Si)
    - Rated to 300 krad (Si)
• Single Event
    - Safe Operating Area Curve for Single Event Effects
    - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 100% of Rated Breakdown and VGS of 10V Off-Bias
• Dose Rate
    - Typically Survives 3E9 Rad (Si)/s at 80% BV DSS
    - Typically Survives 2E12 if Current Limited to I AS
• Photo Current
    - 14nA Per-Rad (Si)/s Typically
• Neutron
   - Maintain Pre-Rad Specifications for 1E13 Neutrons/cm 2
   - Usable to 1E14 Neutrons/cm 2


Specifications

                                                                                                                 FSPYC164R, FSPYC164F   UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . VDS          150                               V
Drain to Gate Voltage (RGS = 20k) . . . . . . . . . . . . . . . . . . . . . . VDGR          150                               V
Continuous Drain Current
    TC = 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID      70 (Note)                           A
    TC = 100 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID             46                               A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM            200                              A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS             ±30                             V
Maximum Power Dissipation
    TC = 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..PT             208                               W
    TC = 100 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT             83                                W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .                 1.67                          W/
Single Pulsed Avalanche Current, L = 100H, (See Test Figure) . . IAS            130                                A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . ..IS             70                                 A
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . .  .ISM            200                                A
Operating and Storage Temperature . . . . . . . . . . . . . .  . . . . TJ, TSTG         -55 to 150                        
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . TL              300                              
   (Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical)                                                                                          3.3 (Typical)                        g




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