FSJ9260R

Features: • 27A, -200V, rDS(ON) = 0.130• Total Dose- Meets Pre-RAD Specifications to 100K RAD (Si)• Single Event- Safe Operating Area Curve for Single Event Effects- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias• Dose Rat...

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SeekIC No. : 004344453 Detail

FSJ9260R: Features: • 27A, -200V, rDS(ON) = 0.130• Total Dose- Meets Pre-RAD Specifications to 100K RAD (Si)• Single Event- Safe Operating Area Curve for Single Event Effects- SEE Immunity f...

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Part Number:
FSJ9260R
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/29

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Product Details

Description



Features:

• 27A, -200V, rDS(ON) = 0.130
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 18.0nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2



Specifications

Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS -200 V
Drain to Gate Voltage (RGS = 20k) . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . VDGR -200 V
Continuous Drain Current
TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . ID 27 A
TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . ID 17 A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . IDM 81 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . .VGS ±20 V
Maximum Power Dissipation
TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT 192 W
TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT 77 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . . . . . . 1.54 W/oC
Single Pulsed Avalanche Current, L = 100H, (See Test Figure). . . . . . . . . . . .  . . . IAS 81 A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . .  . . . . . . . . . IS 27 A
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM 81 A
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . ... .TJ, TSTG -55 to 150
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .. . . TL 300



Description

The Discrete Products Operation of Intersil Corporation FSJ9260R has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.Enhanced Power MOSFET FSJ9260R immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular,is combined with 100K RADS of total dose hardness to provide , FSJ9260R is ideally suited to harsh space environments.The dose rate and neutron tolerance necessary for military applications have not been sacrificed.

The Intersil portfolio of SEGR resistant radiation hardened MOSFETs FSJ9260R includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings.Numerous packaging options are also available.

This MOSFET FSJ9260R is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure.It is specially designed and processed to be radiation tolerant. The MOSFET FSJ9260R is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.

Reliability screening FSJ9260R is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Intersil for any desired deviations from the data sheet.




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