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FSJ163D

Features: * 60A, 130V, rDS(ON) = 0.030* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias* Dose Rate - Typically Survive...

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SeekIC No. : 004344442 Detail

FSJ163D: Features: * 60A, 130V, rDS(ON) = 0.030* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV...

FSJ163D Data Sheet

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Part Number:
FSJ163D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

* 60A, 130V, rDS(ON)  = 0.030
* Total Dose
  - Meets Pre-RAD Specifications to 100K RAD (Si)
* Single Event
  - Safe Operating Area Curve for Single Event Effects
    - SEE Immunity for LET of 36MeV/mg/cm2  with
  VDS  up to 80% of Rated Breakdown and
  VGS of 10V Off-Bias
* Dose Rate
  - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
  - Typically Survives 2E12 if Current Limited to IDM
* Photo Current
  - 12.5nA Per-RAD(Si)/s Typically
* Neutron
  - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2
  - Usable to 1E14 Neutrons/cm2


Specifications

                                                                                                          FSJ163D, FSJ163R       UNITS
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS            130                      V
Drain to Gate Voltage (RGS  = 20k). . . . . . . . . . . . . . . .  .. . .. VDGR        130                       V
Continuous Drain Current
TC  = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . ID             60                         A
TC  = 100 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. ID             38                         A
Pulsed Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . IDM           180                        A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  VGS            20                       V
Maximum Power Dissipation
TC  = 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..PT             192                      W
TC  = 100 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PT              77                        W
Derated Above 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. .             1.54                    W/
Single Pulsed Avalanche Current, L = 100H, (See Test Figure) . . IAS      180                      A
Continuous Source Current (Body Diode). . . . . . . . . . . . . . . . . . IS            60                        A
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . .. . .ISM         180                      A
Operating and Storage Temperature . . . . . . . .. . . . . .. . .TJ , TSTG            -55 to 150           
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . .TL           300                   
(Distance >0.063in (1.6mm) from Case, 10s Max)


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