Position: Home  > All Categories> Integrated Circuits (ICs) > FSJ160D

FSJ160D

Features: • 70A, 100V, rDS(ON) = 0.022Ω• Total Dose- Meets Pre-RAD Specifications to 100K RAD (Si)• Single Event- Safe Operating Area Curve for Single Event Effects- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias• Do...

product image

FSJ160D Picture
See larger image
SeekIC No. : 004344440 Detail

FSJ160D: Features: • 70A, 100V, rDS(ON) = 0.022Ω• Total Dose- Meets Pre-RAD Specifications to 100K RAD (Si)• Single Event- Safe Operating Area Curve for Single Event Effects- SEE Immu...

FSJ160D Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
FSJ160D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• 70A, 100V, rDS(ON) = 0.022Ω
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 9nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2
- Usable to 3E14 Neutrons/cm2


Specifications

Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . .VDS 100 V
Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . .. . . . . . . . . . . . . .. . . . VDGR 100 V
Continuous Drain Current
TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 70 A
TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 44 A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . IDM 200 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . .VGS ±20 V
Maximum Power Dissipation
TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT 192 W
TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT 77 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.54 W/oC
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure). . . . . . . . . . . . IAS 200 A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . .... . . . . IS 70 A
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM 200 A
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . .  .TJ, TSTG -55 to 150 oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . TL 300 oC
(Distance >0.063in (1.6mm) from Case, 10s Max)



Description

The Discrete Products Operation of Intersil Corporation FSJ160D has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular,is combined with 100K RADS of total dose hardness to provide devices, FSJ160D is ideally suited to harsh space environments.The dose rate and neutron tolerance necessary for military applications have not been sacrificed.

The Intersil portfolio of SEGR resistant radiation hardened MOSFETs FSJ160D includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings.Numerous packaging options are also available.

This MOSFET FSJ160D is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure.It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. FSJ160D can be operated directly from integrated circuits.

Reliability screening FSJ160D is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Intersil for any desired deviations from the data sheet.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Transformers
TM-09210
BV222-1-00992
Integrated Circuits (ICs)
TA8435H
1MB12-140
Cables, Wires
821-0814-a
415-0100-150
Circuit Protection
A50QS75-4Y
F-17*77
Relays
WIMA MKP4 0.22UF 630V
WIMA MKP4 4.7UF 630VDC
Tools
TCP202
G084SN05 V.3
View more