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FSGYE230R

Features: • 12A, 200V, rDS(ON) = 0.150• UIS Rated• Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)• Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 82MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 5V Off-Bi...

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SeekIC No. : 004344411 Detail

FSGYE230R: Features: • 12A, 200V, rDS(ON) = 0.150• UIS Rated• Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)• Single Event - Safe Operating Area Curve for Single Event Effec...

FSGYE230R Data Sheet

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Part Number:
FSGYE230R
Supply Ability:
5000

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  • 1~5000
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Product Details

Description



Features:

• 12A, 200V, rDS(ON) = 0.150
• UIS Rated
• Total Dose
   - Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
   - Safe Operating Area Curve for Single Event Effects
   - SEE Immunity for LET of 82MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 5V Off-Bias
• Dose Rate
   - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
   - Typically Survives 2E12 if Current Limited to IAS
• Photo Current
   - 3.0nA Per-RAD (Si)/s Typically
• Neutron
   - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2
   - Usable to 1E14 Neutrons/cm2


Specifications

FSGYE230R UNITS
Drain-Source Voltage VDS
200
V
Drain-Gate Voltage (RGS = 20k). VDGR
200
V
Continuous Drain Current
TC = 25
TC = 100
ID
ID
12
7
A
A
Pulsed Drain Current IDM
40
A
Gate-Source Voltage VGS
±30
V
Maximum Power Dissipation
TC = 25
TC = 100		 PT
PT
42
17
W
W
Linear Derating Factor
0.33
W/
Single Pulsed Avalanche Current,L = 100H, (See Test Figure) IAS
36
A
Continuous Source Current (Body Diode) IS
12
A
Pulsed Source Current (Body Diode) ISM
40
A
Operating And Storage Temperature TJ, TSTG
-55 to +150
Lead Temperature (During Soldering)
Distancme > 0.063 in. (1.6mm) From Case, 10s Max		 TL
300
Weight (Typical)  
1.0 (Typ)
g
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.


Description

Intersil Star*Power Rad Hard MOSFETs FSGYE230R have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs FSGYE230R offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star*Power Gold FETs combine this electrical capability with total dose radiation hardness up to 100K RADs while maintaining the guaranteed performance for SEE (Single Event Effects) which the Intersil FS families have always featured.

The Intersil family of Star*Power FETs FSGYE230R includes a series of devices in various voltage, current and package styles. The portfolio consists of Star*Power and Star*Power Gold products. Star*Power FETs FSGYE230R are optimized for total dose and rDS(ON) while exhibiting SEE capability at full rated voltage up to an LET of 37. Star*Power Gold FETs have been optimized for SEE and Gate Charge combining SEE performance to 80% of the rated voltage for an LET of 82 with extremely low gate charge characteristics.

This MOSFET FSGYE230R is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. FSGYE230R is specifically designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, power distribution, motor drives and relay drivers as well as other power control and conditioning applications. As with conventional MOSFETs these Radiation Hardened MOSFETs offer ease of voltage control, fast switching speeds and ability to parallel switching devices.

Reliability screening FSGYE230R is available as either TXV or Space equivalent of MIL-S-19500.
 
Formerly available as type TA45230W.




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